Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications
- New Power Mosfet Transistors by International Rectifier (IR)
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.008 Ohm, ID = 110A
- This device is a Robust device which can be used for Variety of applications where high speed switching and high current is the requirement.
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